Question: Draw the circuit arrangement for studying. V-I characteristics of a p-n junction diode in(i) forward hung and (ii) reverse biasing Draw the typical V-I characteristics of a silicon diode. Describe briefly the following term: (i) minority carrier injection in forward binding and (ii) breakdown voltage in reverse biasing
The correct answer is –
(i) Forward Biasing:
(ii) Reverse Biasing:
In forward biasing, the p-n junction diode is connected to a battery in such a way that the positive terminal of the battery is connected to the p-type region of the diode (the anode), and the negative terminal of the battery is connected to the n-type region of the diode (the cathode). In this configuration, the diode is said to be forward biased. A resistor is connected in series with the diode to limit the current.
In reverse biasing, the p-n junction diode is connected to a battery in such a way that the positive terminal of the battery is connected to the n-type region of the diode (the cathode), and the negative terminal of the battery is connected to the p-type region of the diode (the anode). In this configuration, the diode is said to be reverse biased. Again, a resistor is connected in series with the diode to limit the current.
